Japanese Journal of Applied Physics · 1981 · 32 citations · 6 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistryThin FilmsAmorphous Electronic MaterialsAmorphous MaterialsAmorphous SolidsInorganic MaterialsOxide SemiconductorsThin Film Electrical PropertiesAmorphous OxidesAmorphous Thin FilmsElectron Beam Irradiation EffectsElectron Beam Resist MaterialsFilm ThicknessMaterial ColorationResist ContrastThreshold Doses
It was found that amorphous WO 3 films become insoluble in alkaline solutions after electron-beam irradiation. Exposure characteristics show that threshold doses required for this effect increase with increasing incident electron energy and film thickness. The blue coloration simultaneously obtained by electron-beam irradiation is not directly responsible for the change in the solubility. This inorganic electron resist has some advantageous features in resolution, contrast, resistance to heat and acid, and ease of the processing.
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A new inorganic electron resist of high contrast
Akira Yoshikawa, Osamu Ochi, Haruo Nagai et al. · Applied Physics Letters · 1977 · 82 citations
Natural Sciences, Materials Engineering, Materials Science +17
M. S. Chang, J. T. Chen · Applied Physics Letters · 1978 · 39 citations
Natural Sciences, Materials Engineering, Materials Science +13