Physics of the Solid State · 2007 · 26 citations · 18 references
Natural SciencesMaterials EngineeringMaterials ScienceNanomaterialsSemiconductor MaterialsSurface ScienceSemiconductor InterfacesSemiconductor NanomaterialsSemiconductor PhysicsSemiconductor SurfacesSurface OxidationSurface PhysicsSemiconductor NanostructuresSemiconductor OxidationSurface Oxidation Mechanisms
Variations in the morphology of an InSe surface caused by air oxidation and the influence of the oxide-layered-semiconductor heteroboundary on the photoelectric properties of the In 2 O 3 -InSe structure were studied. It is found that an ordered nanosized heteroboundary can form as a result of oxidation of the layered InSe semiconductor and that this heteroboundary determines the high photosensitivity of the In 2 O 3 -InSe heterostructure in the spectral region of exciton absorption at room temperature.
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Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces
R. Nötzel, N. N. Ledentsov, L. Däweritz et al. · Physical Review Letters · 1991 · 296 citations
Excitonic absorption edge of indium selenide
J. Camassel, P. Merle, H. Mathieu et al. · Physical review. B, Condensed matter · 1978 · 249 citations