Measurement of boron and phosphorus concentration in silicon by low-temperature FTIR spectroscopy

Characterization and metrology for ULSI technology

David G. Seiler · Characterization and Metrology for ULSI Technology · 2006 · 350 citations

Electrical Engineering, Engineering, Nondestructive Testing +9

Relationship between resistivity and phosphorus concentration in silicon

F. Mousty, P. Ostoja, L. Passari · Journal of Applied Physics · 1974 · 164 citations

Materials Science, Doped Silicon, Electrical Engineering +11

Drift mobility and Hall coefficient factor of holes in germanium and silicon

H. Nakagawa, S. Źükotyński · Canadian Journal of Physics · 1978 · 34 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Minority carrier mobility of Czochralski-grown silicon by microwave-detected photoconductance decay

A. W. Stephens, Martin A. Green · Journal of Applied Physics · 1993 · 19 citations

Minority Carrier Mobility, Electrical Engineering, Engineering +15