M. Porrini

Shallow thermal donors in nitrogen-doped silicon

V. V. Voronkov, M. Porrini, P Collareta et al. · Journal of Applied Physics · 2001 · 48 citations

Engineering, Crystal Growth Technology, Solid-state Chemistry +17

Minority carrier lifetime of p-type silicon containing oxygen precipitates: influence of injection level and precipitate size/density

M. Porrini, P Tessariol · Materials Science and Engineering B · 2000 · 19 citations

Materials Science, Semiconductor Device, Engineering +8

Behavior of volatile dopants (P, Sb) in Czochralski silicon growth

M. Porrini, R. Scala, V. V. Voronkov · Journal of Crystal Growth · 2016 · 17 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +8

Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen

A. Borghesi, A. Sassella, P. Geranzani et al. · Materials Science and Engineering B · 2000 · 14 citations

Chemical Engineering, Engineering, Oxidation Resistance +12

Computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation

Andrea Virzi, M. Porrini · Materials Science and Engineering B · 1993 · 14 citations

Defect Tolerance, Engineering, Physics +5