H. Ch. Alt

Shallow donors in GaN—The binding energy and the electron effective mass

B. K. Meyer, D. Volm, A. Graber et al. · Solid State Communications · 1995 · 161 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Experimental evidence for a negative-<i>U</i>center in gallium arsenide related to oxygen

H. Ch. Alt · Physical Review Letters · 1990 · 69 citations

Engineering, Chemistry, Electronic Excited State +16

Photosensitivity of the 714 and 730 cm−1 absorption bands in semi-insulating GaAs: Evidence for a deep donor involving oxygen

H. Ch. Alt · Applied Physics Letters · 1989 · 55 citations

Optical Materials, Engineering, Optoelectronic Devices +25

Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1−xNx layers

H. Ch. Alt, A. Yu. Egorov, H. Riechert et al. · Applied Physics Letters · 2000 · 52 citations

Optical Materials, Engineering, Nitrogen Fraction +18

Fine structure of the oxygen-related local mode at 714 cm−1 in GaAs

H. Ch. Alt · Applied Physics Letters · 1989 · 41 citations · Full text

Engineering, Cm−1 Band, Fine Structure +17