Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification

Abstract

This work reports the first complete experimental demonstration and investigation of subthreshold swing, SS, smaller than 60 mV/decade, at room temperature, due to internal voltage amplification in FETs with a Metal-Ferroelectric-Metal-Oxide gate stack. The investigated p-type MOS transistor is a dedicated test structure to explore the negative capacitance effect by probing the internal voltage between the P(VDF-TrFE) and SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> dielectric layers of the gate stack. We find that the region of internal surface potential amplification, dψ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</sub> /dV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> >;1, corresponds to an S-shape of the polarization versus ferroelectric voltage (associated with negative capacitance). In Fe-FETs the internal voltage amplification could significantly lower their SS, even without reaching sub-60mV/dec values. SS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> as low as 46 to 58 mV/decade and average swings, SS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">avg</sub> , as small as 51 to 59 mV/dec are observed for the first time in a minor loop hysteretic characteristics of Fe-FETs.