Near interface H+ trapping and its influence on H+ transport in hydrogenated Unibond buried oxides

Abstract

The effects of applied oxide field and H+ concentration on the transport of mobile protons across a buried oxide layer are examined in hydrogenated Unibond material. The H+ travel slower when moving from the substrate Si/SiO2 to the top Si/SiO2 interfaces than in the opposite direction. The effect of the self-field due to H+ in the oxide is insignificant even when that field is larger than the applied field. These results suggest that detrapping from defects near the Si/SiO2 interfaces plays a critical role in the H+ transport.