Journal of The Electrochemical Society · 2011 · 10 citations · 19 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceInterface EngineeringSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesSurface Chemistry Of SolidsSurface PhysicsAnnealing Temperature EffectsAnnealing Time EffectsMicrostructural ChangeMicrostructural CharacterizationRapid Thermal AnnealingResistivitySheet ResistanceThermal Annealing
We have investigated electrical and microstructural properties of Pt-germanides as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Pt films reacted with Ge and produced Pt-germanides. The Pt2Ge3 phase was completely transformed into PtGe2 at the RTA temperatures in the excess of 500°C. The specific contact resistivity (ρc) and sheet resistance (Rs) were investigated as a function of germanidation temperatures. Both ρc and Rs increased after the RTA process of 400°C, and then decreased with increasing annealing temperature. The increase in Rs and ρc at 400°C could be associated with the presence of a highly resistive Pt2Ge3 phase. RTA process at 700°C led to the severe degradation of surface and interface morphologies of a PtGe2 film caused by the agglomeration. This could be responsible for the main contribution to the increase in Rs and ρc.
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Fermi-level pinning and charge neutrality level in germanium
A. Dimoulas, Polychronis Tsipas, A. Sotiropoulos et al. · Applied Physics Letters · 2006 · 605 citations