Hot-carrier effects in high magnetic fields in silicon inversion layers at low temperatures:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>channel

Abstract

A study of hot-carrier effects in the presence of high magnetic fields in $p$-type silicon inversion layers is reported in a range of lattice temperatures between 1.25 and 20 K. Carrier temperatures ${T}_{c}$ as a function of the electric field are deduced from measurements of the amplitude of Shubnikov-de Haas oscillations as a function of lattice temperature ${T}_{L}({T}_{L}&lt;10 \mathrm{K})$ and electric field $E$ at high inversion-layer densities for the (110) orientation. For higher lattice temperatures, ${T}_{c}$ is deduced from the classical magnetoresistance. In addition, measurements of the surface conductivity $\ensuremath{\sigma}$ as a function of the source drain electric field at low hole concentrations, where $\ensuremath{\sigma}$ depends on the temperature and the surface orientation, have been performed. It is found $\ensuremath{\sigma}$ is proportional to ${E}^{s}$ with $0\ensuremath{\le}s\ensuremath{\le}3$ over nearly two decades of $E$ values.