Publication | Closed Access
The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion Layer
137
Citations
9
References
1969
Year
SemiconductorsQuantum ScienceRoom TemperatureTwo-dimensional LatticeEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsQuantum MaterialsLow-dimensional SystemSemiconductor MaterialSemiconductor Inversion LayerCharge Carrier TransportSemiconductor Nanostructures
A theory of two-dimensional lattice scattering for electrons or holes in a semiconductor inversion layer is described. The theory can explain the electron mobility in Si inversion layers at room temperature taking the two-dimensional deformation potential constant as 23±1 eV.
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