RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION-IMPLANTED SILICON

Abstract

Thermally stimulated current measurements have been conducted on low-dose carbon-implanted silicon. After annealing for lattice reordering, five defect levels are found still present and of energies ranging from 0.27 to 0.40 eV. Since they all show similar annealing to above 500°C, they reveal a major annealing stage in low-dose ion-implanted silicon that occurs at considerably higher temperatures than what is generally ascribed to lattice reordering.