Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

Memristive switching mechanism for metal/oxide/metal nanodevices

J. Joshua Yang, Matthew D. Pickett, Xuema Li et al. · Nature Nanotechnology · 2008 · 3K citations

Engineering, Materials Engineering, Materials Science +14

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee et al. · Nature Materials · 2011 · 2.2K citations

Engineering, Materials Engineering, Materials Science +14

Determination of the V2p XPS binding energies for different vanadium oxidation states (V5+ to V0+)

Geert Silversmit, Diederik Depla, Hilde Poelman et al. · Journal of Electron Spectroscopy and Related Phenomena · 2004 · 1.9K citations

Natural Sciences, Chemistry, Materials Science +10

Emerging memories: resistive switching mechanisms and current status

Doo Seok Jeong, Reji Thomas, Ram S. Katiyar et al. · Reports on Progress in Physics · 2012 · 1.1K citations

Natural Sciences, Materials Engineering, Materials Science +17

High switching endurance in TaOx memristive devices

J. Joshua Yang, M.-X. Zhang, John Paul Strachan et al. · Applied Physics Letters · 2010 · 634 citations · Full text

Engineering, Materials Engineering, Materials Science +13