Temperature and polarization dependent polynomial based non-linear analytical model for gate capacitance of AlmGa1−mN/GaN MODFET

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Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

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Optical constants of epitaxial AlGaN films and their temperature dependence

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High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors

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Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor

Yifei Zhang, Jasprit Singh · Journal of Applied Physics · 1999 · 184 citations · Full text

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