The Impact Ionization MOSFET (IMOS) as low-voltage optical detector

Geiger-mode avalanche photodiodes, history, properties and problems

D. Renker · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2006 · 487 citations

Engineering, Electrical Engineering, Materials Science +11

An optimized avalanche photodiode

H. Ruegg · IEEE Transactions on Electron Devices · 1967 · 103 citations

Engineering, Electrical Engineering, Materials Science +17

Improved Reliability by Reduction of Hot-Electron Damage in the Vertical Impact-Ionization MOSFET (I-MOS)

Ulrich Abelein, M. Born, Krishna K. Bhuwalka et al. · IEEE Electron Device Letters · 2007 · 49 citations

Engineering, Electrical Engineering, Electronic Materials +15

Doping profile dependence of the vertical impact ionization MOSFET’s (I-MOS) performance

Ulrich Abelein, Peter Iskra, Markus Schindler et al. · Solid-State Electronics · 2007 · 29 citations

Engineering, Computer Engineering, Electrical Engineering +12

High-speed and low-noise avalanche photodiode operating at 1.06 /spl mu/m

Peng Yuan, O. Baklenov, Hui Nie et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2000 · 25 citations

Engineering, Electrical Engineering, Microelectronics +16