Concepedia

M. Born

MB

5

Publications

262

Citations

5

H-Index

2006

Active since

Affiliations

Universität der Bundeswehr München(Current)

M. Born is an author at Universität der Bundeswehr München specializing in applied physics, electrical engineering, and nanoelectronics.

Top concepts

EngineeringApplied PhysicsNanoelectronicsMicroelectronicsElectrical EngineeringDevice ModelingElectronic EngineeringPhysicsThermodynamicsElectronic Packaging

Publications per year

2006–2008

5

Publications

5

P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths

Krishna K. Bhuwalka, M. Born, Markus Schindler et al. · Japanese Journal of Applied Physics · 2006 · 111 citations

Device Modeling, Experimental Results, Electrical Engineering +12

Tunnel FET: A CMOS Device for high Temperature Applications

M. Born, Krishna K. Bhuwalka, Markus Schindler et al. · 2006 · 62 citations

Device Modeling, Tunnel Transistors, Electrical Engineering +11

Improved Reliability by Reduction of Hot-Electron Damage in the Vertical Impact-Ionization MOSFET (I-MOS)

Ulrich Abelein, M. Born, Krishna K. Bhuwalka et al. · IEEE Electron Device Letters · 2007 · 49 citations

Electrical Engineering, Lateral Device, Engineering +12

A Novel Vertical Impact Ionisation MOSFET (I-MOS) Concept

Ulrich Abelein, M. Born, Krishna K. Bhuwalka et al. · 2006 · 30 citations

Experimental Results, Electrical Engineering, Ion Implantation +9

Theoretical evaluation of maximum doping concentration, breakdown voltage and on-state resistance of field-plate compensated devices

I. Pawel, Ralf Siemieniec, M. Born · 2008 · 10 citations

Engineering, Breakdown Voltage, Semiconductor Device +16

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