Concepedia

Au–Ge Ohmic Contact to n-GaAs by IR Lamp Alloying

Japanese Journal of Applied Physics · 1984 · 15 citations · 4 references

Concepts

EngineeringElectrical EngineeringPhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsElectrical ConductivityMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor SurfacesContact MaterialsContact ResistanceElectrical Contact ResistanceOhmic ContactsOhmic MaterialsTemperature Dependence Of Resistance

Abstract

Utilisation d'un four a lampe I.R. pour obtenir des contacts ohmiques a resistance relativement basse. La resistance decroit quand la temperature d'alliage croit, quand les autres parametres sont fixes. Cependant la morphologie de surface tend a se deteriorer a haute temperature

References

4

The effects of contact size and non-zero metal resistance on the determination of specific contact resistance

Gregory S. Marlow, Mukunda B. Das · Solid-State Electronics · 1982 · 456 citations

Natural Sciences, Materials Engineering, Materials Science +8

Effects of the Heating Rate in Alloying of An-Ge to<i>n</i>-Type GaAs on the Ohmic Properties

Naoki Yokoyama, Shinji Ohkawa, Hajime Ishikawa · Japanese Journal of Applied Physics · 1975 · 27 citations

Engineering, Materials Engineering, Materials Science +14

An improved AuGe ohmic contact to n-GaAs

Marshall I. Nathan, M. Heiblum · Solid-State Electronics · 1982 · 23 citations

Engineering, Electrical Engineering, Materials Science +12

Microstructure and Resistivity of Laser‐Annealed Au‐Ge Ohmic Contacts on GaAs

O. Aina, S. W. Chiang, Y. S. Liu et al. · Journal of The Electrochemical Society · 1981 · 15 citations

Engineering, Materials Science, Physics +17