Microstructure and Resistivity of Laser‐Annealed Au‐Ge Ohmic Contacts on GaAs

Abstract

The results of a study of laser‐annealed Au‐Ge ohmic contacts to are presented. The specific contact resistivity was observed to decrease with increasing laser energy density while the grain size of the polycrystalline microstructure (as observed by transmission electron microscopy) increased. At higher energy densities, both parameters were found to remain constant within the experimental conditions used. Transmission electron micrographs, and sputtering Auger electron spectroscopic data showing Ga, As, and Ge redistribution within the Au‐Ge film are also presented.