Maximum statistical increase of optical absorption in textured semiconductor films

Abstract

Complete statistical randomization of the direction of propagation of light trapped in semiconductor films can result in a large absorption enhancement. We have employed a calorimetric technique, photothermal deflection spectroscopy, to monitor the absorption of alpha-SiH(x) films textured by the natural lithography process. The observed enhancement factors, as high as 11.5, are consistent with full internal phase-space randomization of the incoming light.