High-Quality Zinc Sulfide Thin Films Grown by MOCVD Using Carbon Disulfide as A Sulfur Source

Abstract

High-quality zinc sulfide (ZnS) films are prepared by a low-pressure metalorganic chemical vapor deposition technique using carbon disulfide (CS 2 ) as a new sulfur source material. In the diethylzinc-CS 2 system, the ZnS films are grown on the substrates at a temperature above about 200°C. The ZnS films with a strongly preferred orientation are grown on glass substrates at a temperature of 325–425°C and with an atomic ratio of supplied sulfur to zinc of 18–22.