Molecular beam epitaxial growth and photoluminescence investigation of Si1−yCy layers

High-mobility Si and Ge structures

F. Schäffler · Semiconductor Science and Technology · 1997 · 765 citations

Engineering, Materials Science, Physics +17

Ultrathin Si_mGe_nstrained layer superlattices-a step towards Si optoelectronics

H. Presting, H. Kibbel, M. Jaroš et al. · Semiconductor Science and Technology · 1992 · 144 citations

Natural Sciences, Materials Science, Physics +17

Synthesis of Si1−<i>y</i>C<i>y</i> alloys by molecular beam epitaxy

Subramanian S. Iyer, K. Eberl, Mark S. Goorsky et al. · Applied Physics Letters · 1992 · 121 citations

Engineering, Materials Engineering, Materials Science +17

Precipitation and relaxation in strained Si1−<i>y</i>C<i>y</i>/Si heterostructures

J. Strane, H. J. Stein, S. R. Lee et al. · Journal of Applied Physics · 1994 · 119 citations

Natural Sciences, Materials Engineering, Materials Science +17

Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−<i>y</i>C<i>y</i> on Si(001)

H. J. Osten, Myeongcheol Kim, K. Pressel et al. · Journal of Applied Physics · 1996 · 91 citations

Engineering, Materials Engineering, Materials Science +17