Growth of GaN on Si(100) substrates using BP as a buffer layer—selective epitaxial growth

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 2K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Hole Compensation Mechanism of P-Type GaN Films

Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh et al. · Japanese Journal of Applied Physics · 1992 · 1.1K citations

Engineering, Materials Engineering, Materials Science +17

Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers

Shuji Nakamura, Masayuki Senoh, Takashi Mukai · Japanese Journal of Applied Physics · 1991 · 433 citations

Engineering, Electrical Engineering, Materials Science +17

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Ting Lei, M. Fanciulli, R. J. Molnar et al. · Applied Physics Letters · 1991 · 371 citations

Engineering, Materials Engineering, Materials Science +17

Low temperature growth interface for growing Boron Monophosphide on Si substrates

Suzuka Nishimura, Kazutaka Terashima · Applied Surface Science · 2000 · 10 citations

Engineering, Materials Engineering, Materials Science +16