On the role of silicon during growth of vpe GaAs-layers

The incorporation and characterisation of acceptors in epitaxial GaAs

D.J. Ashen, P. J. Dean, D.T.J. Hurle et al. · Journal of Physics and Chemistry of Solids · 1975 · 560 citations

Engineering, Electrical Engineering, Materials Science +12

The preparation of high purity gallium arsenide by vapour phase epitaxial growth

J.R. Knight, D. Effer, P. R. Evans · Solid-State Electronics · 1965 · 146 citations

Natural Sciences, Materials Engineering, Materials Science +12

Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layers

J.V. DiLorenzo · Journal of Crystal Growth · 1972 · 135 citations

Engineering, Electrical Engineering, Materials Science +16

Ionized Impurity Density in <i>n</i>-Type GaAs

C. M. Wolfe, G. E. Stillman, J. O. Dimmock · Journal of Applied Physics · 1970 · 121 citations

Engineering, Electrical Engineering, Materials Science +17

Calculations of point defect concentrations and nonstoichiometry in GaAs

R.M. Logan, D.T.J. Hurle · Journal of Physics and Chemistry of Solids · 1971 · 120 citations

Natural Sciences, Materials Engineering, Materials Science +12