Hydrogen passivation of interfacial gap state defects at UHV-prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100) - Concepedia

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Hydrogen passivation of interfacial gap state defects at UHV-prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100)

11

Citations

34

References

2008

Year

Bert Stegemann, Andreas Schoepke, Daniel Sixtensson, B. Górka, M. Schmidt

Physica E Low-dimensional Systems and Nanostructures

Materials ScienceHydrogen PassivationEngineeringSurface ScienceApplied PhysicsSemiconductor MaterialSilicon On Insulator

References

	Year	Citations

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