Large scale ultraviolet-based nanoimprint lithography

Abstract

Limits in resolution and accuracy of large scale ultraviolet (UV)-based nanoimprint lithography using rigid quartz molds and spin coated UV curable resists are presented. The resolution and precision parameters are closely followed from pattern in the mold through imprints in the resist and finally compared with structures transferred into silicon by special etching processes. Specific attention is paid to the simultaneous patterning of nano and microscale structures. The applicability for functional nanoelectronic components is demonstrated by the fabrication of an NMOS transistor based on SOI, whose channel width is reduced to 50 nm.