PULSION® HP: Tunable, High Productivity Plasma Doping

Abstract

Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter‐doping and contact doping. The PULSION HP is a new plasma doping tool developed by Ion Beam Services for high‐volume production that enables customer control of the dominant mechanism—deposition, implant, or etch. The key features of this tool are a proprietary, remote RF plasma source that enables a high density plasma with low chamber pressure, resulting in a wide process space, and special chamber and wafer electrode designs that optimize doping uniformity.