Misfit dislocations in lattice-mismatched epitaxial films

Abstract

Abstract This article reviews current experimental and theoretical knowledge of the relaxation of lattice-mismatch strain via misfit dislocations in heteroepitaxial semiconductor films. The energetics and kinetics of misfit dislocation nucleation, propagation, and interaction processes are described in detail. In addition, there is a brief review of the principal properties of dislocations in bulk semiconductors and an outline of existing models for strained layer stability.