Charge neutrality and the internal electric field produced by impurity diffusion

General Theory of Impurity Diffusion in Semiconductors via the Vacancy Mechanism

S. M. Hu · Physical Review · 1969 · 79 citations

Natural Sciences, Materials Science, Physics +17

Theoretical calculations of the Fermi level and of other parameters in phosphorus doped silicon at diffusion temperatures

Rajeev Kumar Jain, R.J. Van Overstraeten · IEEE Transactions on Electron Devices · 1974 · 36 citations

Engineering, Materials Engineering, Materials Science +17

The effect of the internal electric field on ionized impurity diffusion in semiconductors

D. Shaw, A L J Wells · British Journal of Applied Physics · 1966 · 31 citations

Engineering, Electrical Engineering, Electronic Materials +16

Diffusion in Heavily Doped Semiconductors: Local Charge Neutrality and One-Band Approximations

S. M. Hu · Journal of Applied Physics · 1972 · 13 citations

Natural Sciences, Materials Science, Condensed Matter Physics +16