Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared

Abstract

Near-infrared detection is reported for a double-barrier quantum-well infrared photodetector based on a 30-Å GaAs1−yNy (y≈0.01) quantum well. The growth procedure using plasma-assisted molecular-beam epitaxy is described. The as-grown sample exhibits a detection wavelength of 1.64 μm at 25 K. The detection peak strengthens and redshifts to 1.67 μm following rapid thermal annealing at 850 °C for 30 s. The detection peak position is consistent with the calculated band structure based on the band-anticrossing model for nitrogen incorporation into GaAs.