Á. Guzmán

Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared

E. Luna, M. Hopkinson, J. M. Ulloa et al. · Applied Physics Letters · 2003 · 31 citations

Categoryquantum Electronics, Optical Materials, Engineering +19

Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells

A. D. Utrilla, D.F. Reyes, J. M. Llorens et al. · Solar Energy Materials and Solar Cells · 2016 · 29 citations · Full text

Ii-vi Semiconductor, Electrical Engineering, Improved Performance +9

Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates

J. Miguel‐Sánchez, Á. Guzmán, J. M. Ulloa et al. · Applied Physics Letters · 2004 · 26 citations

Optical Materials, Engineering, B Gaas +20

Strain-balanced type-II superlattices for efficient multi-junction solar cells

Alicia Gonzalo, A. D. Utrilla, D.F. Reyes et al. · Scientific Reports · 2017 · 25 citations · Full text

High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots

M. J. Milla, J. M. Ulloa, Á. Guzmán · Applied Physics Letters · 2012 · 24 citations

Optical Materials, Engineering, Polar Character +24