Rutherford backscattering study of crystal orientation dependent annealing effects in high-dose antimony implanted silicon

Solid Solubilities of Impurity Elements in Germanium and Silicon*

F. A. Trumbore · Bell System Technical Journal · 1960 · 1.4K citations

Materials Science, Impurity Elements, Engineering +10

ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING

John Davies, J. Denhartog, L. Eriksson et al. · Canadian Journal of Physics · 1967 · 274 citations

Materials Science, Semiconductors, Ion Implantation +15

ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS

J. W. Mayer, O. J. Marsh, G. A. Shifrin et al. · Canadian Journal of Physics · 1967 · 117 citations

Materials Science, Semiconductors, Electrical Engineering +15

Influence of thermal history on the residual disorder in implanted <111> silicon

L. Csepregi, W. K. Chu, Helmut Müller et al. · Radiation Effects · 1976 · 97 citations

Materials Science, Semiconductors, Mev 4He +14