Applied Physics Letters · 1989 · 13 citations · 7 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor SurfacesCrystal Quality ControlElectroluminescenceEpitaxial Growth KineticsMolecular Beam EpitaxyOptical PropertiesPhotoluminescencePhotoluminescence SpectroscopySurface Optical Properties
Electrical and optical properties of GaAs layers are improved by applying substrate bias during electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE). The highest mobility obtained without substrate bias is 4500 cm2 V−1 s−1. By applying positive bias, the mobility of the grown layer is increased to as high as 6800 cm2 V−1 s−1. Intense photoluminescence spectra comparable to that of a high quality MBE-grown layer are also observed. The suppression of high-energy ion impingement on the growing surface plays an important role in obtaining high quality crystal.
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