Plasma-assisted low temperature epitaxy

Abstract

Plasma-assisted low temperature (≤430 °C) epitaxy of GaAs layers is reported. The layers were grown at low pressures using metalorganic sources in an isolated plasma-enhanced chemical vapor deposition system. The epitaxial layers show excellent surface morphology when grown at ∼400 °C. Mobility values of 5500 cm2/V s at room temperature and 28 500 cm2/V s at 77 K were obtained for these layers. Photoluminescence spectra showed sharp and well-resolved exciton emissions. A deep electron trap at 0.63 eV with a concentration of 5×1013 cm−3 was observed in the plasma grown layers. Schottky barrier devices fabricated on epi-n/n+ substrates showed nearly ideal I–V characteristics.