Electrochemical and Solid-State Letters · 2001 · 16 citations · 4 references
EngineeringMaterials EngineeringMaterials ScienceElectrochemical EngineeringSemiconductor MaterialsThin FilmsChemical Vapor DepositionSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsThermal Properties Of SemiconductorsThin-film DepositionChemical Vapor Deposition MaterialsLow-pressure Chemical Vapor DepositionNitride Thin FilmsNitrides DepositionNitrides Thin FilmsSiliconSilicon Chemical Vapor DepositionSilicon Nitride
We have developed a single wafer rapid thermal processing (RTP) module for low-pressure chemical vapor deposition (LPCVD) of silicon nitride. Nitride films were grown from dichlorosilane (DCS) and ammonia at 740°C under a pressure of 0.5 Torr. The gas flows of 25:75 sccm provided films 40 Å thick in 1 min. Successive 25 wafer runs resulted in consistent average thickness and uniformity (below 1.0% 1σ). The within wafer thickness range (max-min) was less than 2 Å. Conformal coverage over nonplanar substrates was also demonstrated. The hot-wall reactor configuration suppresses the condensation of byproduct. © 2001 The Electrochemical Society. All rights reserved.
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