LPCVD of Silicon Nitride from Dichlorosilane and Ammonia by Single Wafer Rapid Thermal Processing

Abstract

We have developed a single wafer rapid thermal processing (RTP) module for low-pressure chemical vapor deposition (LPCVD) of silicon nitride. Nitride films were grown from dichlorosilane (DCS) and ammonia at 740°C under a pressure of 0.5 Torr. The gas flows of 25:75 sccm provided films 40 Å thick in 1 min. Successive 25 wafer runs resulted in consistent average thickness and uniformity (below 1.0% 1σ). The within wafer thickness range (max-min) was less than 2 Å. Conformal coverage over nonplanar substrates was also demonstrated. The hot-wall reactor configuration suppresses the condensation of byproduct. © 2001 The Electrochemical Society. All rights reserved.