2006 · 36 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesField-effect TransistorsIii-v SemiconductorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAvalanche Breakdown In Wide-bandgap DevicesBreakdown VoltageGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesHeterostructure Field-effect TransistorsHeterostructure TransistorsHigh-electron-mobility TransistorsHigh-voltage Breakdown
Enhancement-mode (E-mode) AlGaN/GaN high-electron mobility transistors (HEMTs) with integrated slant field-plates were developed for high breakdown voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BD</sub> ) and low on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ). Combination of the self-aligned slant field-plate technology for high VBD and self-aligned CF4 plasma treatment for E-mode operation yielded high-performance device with a V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BD</sub> of 1400V, which is one of the highest reported VBD value among GaN-based E-mode HEMTs. Using the active area of the device, the R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> was calculated to be below 3mOmegamiddotcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>
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AlGaN/AlN/GaN high-power microwave HEMT
L. Shen, S. Heikman, Brendan Moran et al. · IEEE Electron Device Letters · 2001 · 494 citations
High-power AlGaN/GaN HEMTs for Ka-band applications
Tomás Palacios, A. Chakraborty, Siddharth Rajan et al. · IEEE Electron Device Letters · 2005 · 492 citations · Full text