Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers

Abstract

We report low densities of electrically active defects and low optical losses at the wafer fused interface between InP and GaAs. Electron beam induced current analysis shows electrically active defects with an average spacing of 4.5 μm at the interface and significantly lower densities 0.4 μm from the fused interface. Optical measurements of a Fabry–Perot resonator made by fusing an InP epilayer to a GaAs/AlAs mirror demonstrate a 3% increase in mirror transmission after fusing and negligible absorption at the fused interface. Based on these results, we present design considerations for fused surface emitting lasers.