Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration

Abstract

Centimeter-size single-crystal InP or GaAs wafers have been fused together entirely, face to face or side by side, after a heat treatment in a graphite/quartz reactor which can press the wafers together through differential thermal expansion. Diodes formed by fusing p- and n-type wafers showed normal current-voltage characteristics and light emission. Fusion between lattice-mismatched wafers (i.e., InP and GaAs) has also been demonstrated.