Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors

Abstract

A Monte Carlo study of two-dimensional electron gas mobility in wurtzite GaN high electron mobility transistors is presented to include scattering due to edge dislocations strains. For self-consistency, numerical solution of Schrödinger, Poisson, and charge balance equations are used for the eigenfunctions. Electron mobility predictions around 1.71×103 cm2/V s, are in close agreement with the reported data. At the highest dislocation density of 1010 cm−2, mobility reductions of 16.8% and 8.6% are predicted for 77 and 300 K, respectively. Electron mobility behavior as a function of the channel density at different temperatures is also discussed.