The effect of annealing at 1500°C on migration and release of ion implanted silver in CVD silicon carbide - Concepedia

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The effect of annealing at 1500°C on migration and release of ion implanted silver in CVD silicon carbide

54

Citations

8

References

2006

Year

H.J. MacLean, R. G. Ballinger, L.E. Kolaya, S.A. Simonson, N. Lewis, M. Hanson

Journal of Nuclear Materials

Materials ScienceIon ImplantationEngineeringCvd Silicon CarbideApplied PhysicsCarbide

References

	Year	Citations

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