Kinetics and Mechanisms of High‐Temperature Creep in Silicon Carbide: II, Chemically Vapor Deposited

Abstract

Chemically vapor deposited (CVD) silicon carbide was subjected to constant compressive stresses (110 to 220 MN/m 2 ) at high temperatures (1848 to 2023 K) in order to determine the controlling steady‐state creep mechanisms under these conditions. An extensive TEM study was also conducted to facilitate this determination. The strong preferred crystallographic orientation of this material causes the creep rate to be very dependent on specimen orientation. The stress exponent, n , in the equation εασ n was calculated to be 2.3 below 1923 K and 3.7 at 1923 K. The activation energy for steady‐state creep was determined to be 175 ± 5 kJ/mol throughout the temperature range employed. At temperatures between 1673 and 1873 K, the controlling creep mechanism for CVD Sic is dislocation glide, which is believed to be controlled by the Peierls stress. Although the activation energy does not change, the increase in the stress exponent for samples deformed at 1923 K suggests that the controlling creep mechanism becomes dislocation glide/climb controlled by climb.