Applied Physics Letters · 1993 · 35 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesSilicon MaterialsSurface PhysicsElectrical PropertiesElectron Beam EvaporationJunction Ideality FactorOhmic ConductionOhmic MaterialsRectifying ContactsSchottky ContactsSilicon Carbide
Rectifying Schottky contacts using e-beam evaporation of cobalt have been demonstrated on n-type silicon face 6H-SiC. Examination of the electrical properties was performed by I-V and C-V measurements as a function of annealing temperature in the 300–900 °C range for 1 h. Excellent rectifying behavior was found up to 700 °C. Heat treatments at 800–900 °C formed different cobalt silicides (Co2Si and CoSi) containing homogeneously distributed carbon with carbon agglomerates at the surface. Consecutive annealings from 300 to 800 °C increased the barrier height from 0.8 to 1.3 eV and the ideality factor from 1.15 to 1.46. Heat treatments at 900 °C modified the contacts into an ohmic behavior.
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