X-Ray Analysis of Diffusion-Induced Defects in Gallium Arsenide

Abstract

X-ray diffraction microscopy measurements were made on zinc-diffused surface layers. The diffraction contrast produced through diffusion-induced defects was investigated. Fault structures were deduced from changes in diffraction contrast that occur in large-area topographs recorded through different Bragg reflections. Dislocations having 〈110〉 axis have been identified and associated with the Lomer-Cottrell reaction. X-ray junction profiles have been obtained and correlated with zinc-concentration profiles. It is concluded that diffusion-induced defects in gallium arsenide are generated by a stress-relief mechanism.