Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon

Jan Vanhellemont, Steven Hens, Johan Lauwaert, Olivier De Gryse, P. Vanmeerbeek, Dirk Poelman, Piotr Śpiewak, Igor Romandic, Antoon Theuwis, P. Clauws

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2005 · 15 citations · 22 references

Concepts

Abstract

Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium crystals with special emphasis on intrinsic point defects, on vacancy clustering and on interstitial oxygen. Whenever useful the results are compared with those obtained for silicon.

References

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