Concepedia

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

M. Balaji, A. Claudel, V. Fellmann, Isabelle Gélard, E. Blanquet, Raphaël Boichot, Aurélie Pierret, Brigitte Attal‐Trétout, Alexandre Crisci, Stéphane Coindeau,

Journal of Alloys and Compounds · 2012 · 42 citations · 37 references

DOI

Concepts

References

37

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

, , +17

AlGaN/GaN HEMTs-an overview of device operation and applications

Umesh K. Mishra, P. Parikh, Yifeng Wu · Proceedings of the IEEE · 2002 · 2.2K citations

, , +17

First-Order Raman Effect in Wurtzite-Type Crystals

Carlos Argüello, Denis L. Rousseau, S. P. S. Porto · Physical Review · 1969 · 1K citations

, , +15

Ultraviolet light-emitting diodes based on group three nitrides

Asif Khan, Krishnan Balakrishnan, Tom Katona · Nature Photonics · 2008 · 1K citations

, , +14

Phonon dispersion and Raman scattering in hexagonal GaN and AlN

V. Yu. Davydov, Yu. É. Kitaev, I. N. Goncharuk et al. · Physical review. B, Condensed matter · 1998 · 820 citations

, , +17