V. Fellmann - Concepedia

Author

V. Fellmann

Centre National de la Recherche Scientifique

Also Known As

FELLMANN, Vincent, Fellmann, V., V Fellmann, V. Fellmann, Vincent Fellmann

Publications

236

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA Grenoble Institut polytechnique de Grenoble Université Grenoble Alpes

About

V. Fellmann is an author at Centre National de la Recherche Scientifique specializing in materials science, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	174
2	Applied Physics	7	7	174
3	Materials Science	7	7	174
4	Materials Engineering	4	4	89
5	Chemical Engineering	1	1	10

V. Fellmann

Publications

188

Citations

H-Index

Page 1

	Year	Citations
Molecular beam epitaxy growth and optical properties of AlN nanowires O. Landré, V. Fellmann, P. Jaffrennou, Applied Physics Letters Materials ScienceAluminium NitrideOptical MaterialsEngineeringElectronic Materials	2010	54
Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy M. Balaji, A. Claudel, V. Fellmann, Journal of Alloys and Compounds Materials ScienceMaterials EngineeringAln FilmsAln Nucleation LayersEngineering	2012	42
Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy A. Claudel, V. Fellmann, Isabelle Gélard, Thin Solid Films Materials ScienceMaterials EngineeringAluminium NitrideEngineeringPhysics	2014	27
Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation S. Magalhães, M. Peres, V. Fellmann, Journal of Applied Physics EngineeringImplantation DamageOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	2010	17
Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures A. Redondo‐Cubero, K. Lorenz, E. Wendler, Nanotechnology	2013	14
Strain assisted inter-diffusion in GaN/AlN quantum dots C. Leclère, V. Fellmann, Catherine Bougerol, Journal of Applied Physics Materials ScienceAluminium NitrideEngineeringPhysicsNanomaterials	2013	14
Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy V. Fellmann, P. Jaffrennou, Diane Sam-Giao, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceHigh Al ContentIii/n Flux RatioEngineering	2011	10
Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy N. Coudurier, Raphaël Boichot, V. Fellmann, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials EngineeringMaterials ScienceChemical EngineeringAluminium NitrideEngineering	2013	10

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