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Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

DOI

27

Citations

41

References

2014

Year

A. Claudel, V. Fellmann, Isabelle Gélard, N. Coudurier, D. Sauvage, M. Balaji, E. Blanquet, Raphaël Boichot, Guillaume Beutier, Stéphane Coindeau,
Thin Solid Films

References

YearCitations

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