Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

X-ray diffraction of III-nitrides

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Ultraviolet light-emitting diodes based on group three nitrides

Asif Khan, Krishnan Balakrishnan, Tom Katona · Nature Photonics · 2008 · 1K citations

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Epitaxially grown AlN and its optical band gap

Woosoon Yim, E. J. Stofko, P. J. Zanzucchi et al. · Journal of Applied Physics · 1973 · 600 citations

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222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire

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Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

Martin Kuball · Surface and Interface Analysis · 2001 · 387 citations

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