Electronics Letters · 1994 · 47 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOpticsOptoelectronicsPhotonicsHolographyIntegrated OpticsOptical SourcesOptical WaveguidesPhotonic Integrated CircuitsSemiconductor LasersDiffraction GratingsDistributed Bragg Reflector LasersIntegrated LasersIntegrated Semiconductor LasersQuantum Well LasersReactive Ion EtchingSemiconductor Laser DiodesSemiconductor Laser Fabrication
A ridge waveguide GaAs/AlGaAs quantum well DBR laser fabricated with a simplified grating recess-technology and a third order grating is described. The reflector is fabricated on top of a recessed waveguide using holographic exposure followed by reactive ion etching. The laser operates on a single longitudinal and lateral mode with threshold current as low as 20 mA, output power 5 mW per facet and is intended for monolithically integrated interferometer applications.
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