Electronics Letters · 1994 · 21 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser PhysicsPhotonic Integrated CircuitsQuantum Well DevicesQuantum WellsSemiconductor HeterostructuresSemiconductor LasersDistributed Bragg Reflector LasersQuantum Dot LasersQuantum Well Laser DiodesQuantum Well LasersQuantum Well StructuresReactive Ion EtchingSemiconductor Laser DiodesSemiconductor Laser Fabrication
A single growth step ridge waveguide InGaAs/GaAs quantum well laser with one third-order distributed Bragg reflector (DBR) and one cleaved facet is described. The DBR is fabricated with direct write electron beam lithography and transferred into the epilayers by reactive ion etching. These devices operate on a single longitudinal and fundamental lateral mode, with a threshold current of 23 mA and more than 30 dB of sidemode suppression.
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A novel GaInAsP/InP distributed feedback laser
Z. L. Liau, D. C. Flanders, J. N. Walpole et al. · Applied Physics Letters · 1985 · 29 citations