Low threshold-current, wide tuning-range, butt-joint DBR laser grown with four MOVPE steps

Abstract

InGaAsP/InP butt-joint, buried-heterostructure DBR lasers, with 8 mA threshold current at T = 293 K. have been developed, using electron-beam lithography and a four-step MOVPE process with a semi-insulating Fe : InP current-blocking structure. Packaged devices give 5 mW fibre-coupled power. The maximum tuning range is 9.1 nm. The 3 dB modulation bandwidth is 9 GHz.