p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

Abstract

A comprehensive analysis of forward and reverse current of Ga-face GaN p-n junctions grown by NH3 molecular beam epitaxy (NH3-MBE) on metal organic chemical vapor deposition (MOCVD) GaN:Fe on sapphire is presented. NH3-MBE has a great potential for growing low leakage vertical devices due to its nitrogen-rich growth. Diodes with the lowest n-doping of n∼3.5×1017 cm−3 exhibit an extremely low reverse current of 2.6×10−7 A/cm2 at −40 V and an ideality factor of 1.3, which is lower than the state-of-the-art Ga-face p-n junctions grown on sapphire by MOCVD. An explanation for the difficulty for observing low ideality factors in GaN is presented.