Christophe A. Hurni - Concepedia

Author

Christophe A. Hurni

University of California, Santa Barbara ORCID

Also Known As

C Hurni, C. A. Hurni, Christophe A. Hurni, Christophe Hurni

Publications

881

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara Soraa (United States)The Ohio State University

About

Christophe A. Hurni is an author at University of California, Santa Barbara specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	844
2	Applied Physics	14	16	844
3	Electrical Engineering	11	12	685
4	Natural Sciences	1	1	20
5	Materials Engineering	1	1	32

Christophe A. Hurni

Publications

844

Citations

H-Index

Page 1

	Year	Citations
Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation Christophe A. Hurni, Aurélien David, Michael Joseph Cich, Applied Physics Letters EngineeringOptimized EfficiencyOptoelectronic DevicesBulk GanElectronic Devices	2015	221
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Ramya Yeluri, Jing Lu, Christophe A. Hurni, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringBuried P/n JunctionEngineeringHigh Conductivity	2015	96
Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy David A. Browne, Erin C. Young, Jordan R. Lang, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceNh3 FlowWide-bandgap SemiconductorEngineeringImpurity Incorporation	2012	95
High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy Jing Lang, Carl J. Neufeld, Christophe A. Hurni, Applied Physics Letters Materials ScienceOptical Absorption MeasurementsElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	68
p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents Christophe A. Hurni, Oliver Bierwagen, Jordan R. Lang, Applied Physics Letters Wide-bandgap SemiconductorEngineeringP-n JunctionsOptoelectronic DevicesSemiconductors	2010	47
Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Z. Zhang, Christophe A. Hurni, Aaron R. Arehart, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringGrowth OrientationsEngineering	2012	40
High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes Aurélien David, Christophe A. Hurni, Rafael I. Aldaz, Applied Physics Letters White OledPhotonicsElectrical EngineeringOptical MaterialsEngineering	2014	40
Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures Aurélien David, Christophe A. Hurni, Nathan G. Young, Applied Physics Letters Quantum ScienceElectrical EngineeringPhotonicsEngineeringPhotoluminescence	2016	40
All-optical measurements of carrier dynamics in bulk-GaN LEDs: Beyond the ABC approximation Aurélien David, Nathan G. Young, Christophe A. Hurni, Applied Physics Letters Single-quantum-well StructureEngineeringDifferential Carrier LifetimesBulk-gan LedsCommon Abc Model	2017	40
Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy Christophe A. Hurni, Jordan R. Lang, Peter G. Burke, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorGrowth Temperature	2012	32

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