Christophe A. Hurni

Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

Christophe A. Hurni, Aurélien David, Michael Joseph Cich et al. · Applied Physics Letters · 2015 · 221 citations

Engineering, Optimized Efficiency, Optoelectronic Devices +18

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

Ramya Yeluri, Jing Lu, Christophe A. Hurni et al. · Applied Physics Letters · 2015 · 96 citations

Wide-bandgap Semiconductor, Electrical Engineering, Buried P/n Junction +12

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

David A. Browne, Erin C. Young, Jordan R. Lang et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2012 · 95 citations

Materials Science, Nh3 Flow, Wide-bandgap Semiconductor +14

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

Jing Lang, Carl J. Neufeld, Christophe A. Hurni et al. · Applied Physics Letters · 2011 · 68 citations · Full text

Materials Science, Optical Absorption Measurements, Electrical Engineering +11

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

Christophe A. Hurni, Oliver Bierwagen, Jordan R. Lang et al. · Applied Physics Letters · 2010 · 47 citations

Wide-bandgap Semiconductor, Engineering, P-n Junctions +17